Chapter 5: Difference between revisions

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===NMOS Transistor===
===NMOS Transistor===
*N-channel enhancement-mode MOSFET (metal-oxide semiconductor field effect transistor)
*N-channel enhancement-mode MOSFET (metal-oxide semiconductor field effect transistor)
*The threshold voltage, <math>V_{to}</math>, is the minimum <math>V_{GS}</math> needed to move the transistor from the Cutoff to Triode region.
*The threshold voltage, <math>V_{to}</math>, is the minimum <math>V_{GS}</math> needed to move the transistor from the Cutoff to Triode region. When is reached, a channel forms beneath the gate, allowing current to flow.


{| class="wikitable" border="1"
{| class="wikitable" border="1"
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! Region!! <math>V_{GS}</math> !!
! Region!! <math>V_{GS}</math> !!
|-
|-
| Cutoff|| cell
| Cutoff|| <math>V_{GS}<V_{to}</math>
|-
|-
| Triode|| cell
| Triode|| cell

Revision as of 22:20, 14 March 2010

NMOS Transistor

  • N-channel enhancement-mode MOSFET (metal-oxide semiconductor field effect transistor)
  • The threshold voltage, , is the minimum needed to move the transistor from the Cutoff to Triode region. When is reached, a channel forms beneath the gate, allowing current to flow.
Nmos regions
Region
Cutoff
Triode cell
Saturation