Chapter 5: Difference between revisions

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*N-channel enhancement-mode MOSFET (metal-oxide semiconductor field effect transistor)
*N-channel enhancement-mode MOSFET (metal-oxide semiconductor field effect transistor)
*The threshold voltage, <math>V_{to}</math>, is the minimum <math>V_{GS}</math> needed to move the transistor from the Cutoff to Triode region. When is reached, a channel forms beneath the gate, allowing current to flow.
*The threshold voltage, <math>V_{to}</math>, is the minimum <math>V_{GS}</math> needed to move the transistor from the Cutoff to Triode region. When is reached, a channel forms beneath the gate, allowing current to flow.
:*<math>V_{to}</math> is usually on the order of a couple of volts



{| class="wikitable" border="1"
{| class="wikitable" border="1"
|+ Nmos regions
|+ '''Nmos regions'''
! Region!! <math>V_{GS}\,</math> !! <math>i_D\,</math>
! Region!! <math>V_{GS}\,</math> !! <math>i_D\,</math>
|-
|-

Revision as of 22:21, 14 March 2010

NMOS Transistor

  • N-channel enhancement-mode MOSFET (metal-oxide semiconductor field effect transistor)
  • The threshold voltage, , is the minimum needed to move the transistor from the Cutoff to Triode region. When is reached, a channel forms beneath the gate, allowing current to flow.
  • is usually on the order of a couple of volts


Nmos regions
Region
Cutoff 0
Triode
Saturation