Chapter 5: Difference between revisions
Jump to navigation
Jump to search
No edit summary |
No edit summary |
||
| Line 1: | Line 1: | ||
===NMOS Transistor=== |
===NMOS Transistor=== |
||
*N-channel enhancement-mode MOSFET (metal-oxide semiconductor field effect transistor) |
*N-channel enhancement-mode MOSFET (metal-oxide semiconductor field effect transistor) |
||
*The threshold voltage, <math>V_{to}</math>, is the minimum <math>V_{GS}</math> needed to move the transistor from the Cutoff to Triode region. |
*The threshold voltage, <math>V_{to}</math>, is the minimum <math>V_{GS}</math> needed to move the transistor from the Cutoff to Triode region. When is reached, a channel forms beneath the gate, allowing current to flow. |
||
{| class="wikitable" border="1" |
{| class="wikitable" border="1" |
||
| Line 7: | Line 7: | ||
! Region!! <math>V_{GS}</math> !! |
! Region!! <math>V_{GS}</math> !! |
||
|- |
|- |
||
| Cutoff|| |
| Cutoff|| <math>V_{GS}<V_{to}</math> |
||
|- |
|- |
||
| Triode|| cell |
| Triode|| cell |
||
Revision as of 21:20, 14 March 2010
NMOS Transistor
- N-channel enhancement-mode MOSFET (metal-oxide semiconductor field effect transistor)
- The threshold voltage, , is the minimum needed to move the transistor from the Cutoff to Triode region. When is reached, a channel forms beneath the gate, allowing current to flow.
| Region | ||
|---|---|---|
| Cutoff | ||
| Triode | cell | |
| Saturation |
