Chapter 5: Difference between revisions
Jump to navigation
Jump to search
No edit summary |
No edit summary |
||
Line 11: | Line 11: | ||
| Cutoff|| <math>V_{GS}<V_{to}\,</math> || 0 |
| Cutoff|| <math>V_{GS}<V_{to}\,</math> || 0 |
||
|- |
|- |
||
| Triode|| <math>V_{GS}>V_{to}\,</math> || <math>i_D \propto V_{GS}</math> |
|||
| Triode|| |
|||
|- |
|- |
||
| Saturation || |
| Saturation || |
Revision as of 21:24, 14 March 2010
NMOS Transistor
- N-channel enhancement-mode MOSFET (metal-oxide semiconductor field effect transistor)
- The threshold voltage, , is the minimum needed to move the transistor from the Cutoff to Triode region. When is reached, a channel forms beneath the gate, allowing current to flow.
- is usually on the order of a couple of volts
Region | ||
---|---|---|
Cutoff | 0 | |
Triode | ||
Saturation |