Chapter 5: Difference between revisions
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===NMOS Transistor=== | ===NMOS Transistor=== | ||
*N-channel enhancement-mode MOSFET (metal-oxide semiconductor field effect transistor) | *N-channel enhancement-mode MOSFET (metal-oxide semiconductor field effect transistor) | ||
*The threshold voltage, <math>V_{to}</math>, is the minimum <math>V_{GS}</math> needed to move the transistor from the Cutoff to Triode region. | *The threshold voltage, <math>V_{to}</math>, is the minimum <math>V_{GS}</math> needed to move the transistor from the Cutoff to Triode region. When is reached, a channel forms beneath the gate, allowing current to flow. | ||
{| class="wikitable" border="1" | {| class="wikitable" border="1" | ||
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! Region!! <math>V_{GS}</math> !! | ! Region!! <math>V_{GS}</math> !! | ||
|- | |- | ||
| Cutoff|| | | Cutoff|| <math>V_{GS}<V_{to}</math> | ||
|- | |- | ||
| Triode|| cell | | Triode|| cell | ||
Revision as of 22:20, 14 March 2010
NMOS Transistor
- N-channel enhancement-mode MOSFET (metal-oxide semiconductor field effect transistor)
- The threshold voltage, , is the minimum needed to move the transistor from the Cutoff to Triode region. When is reached, a channel forms beneath the gate, allowing current to flow.
| Region | ||
|---|---|---|
| Cutoff | ||
| Triode | cell | |
| Saturation |