Chapter 5: Difference between revisions

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{| class="wikitable" border="1"
{| class="wikitable" border="1"
|+ Nmos regions
|+ Nmos regions
! Region!! <math>V_{GS}</math> !!  
! Region!! <math>V_{GS}\,</math> !!  
|-
|-
| Cutoff|| <math>V_{GS}<V_{to}</math>
| Cutoff|| <math>V_{GS}<V_{to}\,</math>
|-
|-
| Triode|| cell
| Triode||  
|-
|-
| Saturation ||  
| Saturation ||  
|}
|}

Revision as of 22:20, 14 March 2010

NMOS Transistor

  • N-channel enhancement-mode MOSFET (metal-oxide semiconductor field effect transistor)
  • The threshold voltage, Vto, is the minimum VGS needed to move the transistor from the Cutoff to Triode region. When is reached, a channel forms beneath the gate, allowing current to flow.
Nmos regions
Region VGS
Cutoff VGS<Vto
Triode
Saturation
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