Chapter 5: Difference between revisions
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{| class="wikitable" border="1" | {| class="wikitable" border="1" | ||
|+ Nmos regions | |+ Nmos regions | ||
! Region!! <math>V_{GS}\,</math> !! <math>i_D</math> | ! Region!! <math>V_{GS}\,</math> !! <math>i_D\,</math> | ||
|- | |- | ||
| Cutoff|| <math>V_{GS}<V_{to}\,</math> || 0 | | Cutoff|| <math>V_{GS}<V_{to}\,</math> || 0 |
Revision as of 22:21, 14 March 2010
NMOS Transistor
- N-channel enhancement-mode MOSFET (metal-oxide semiconductor field effect transistor)
- The threshold voltage, , is the minimum needed to move the transistor from the Cutoff to Triode region. When is reached, a channel forms beneath the gate, allowing current to flow.
Region | ||
---|---|---|
Cutoff | 0 | |
Triode | ||
Saturation |