Chapter 5: Difference between revisions
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*N-channel enhancement-mode MOSFET (metal-oxide semiconductor field effect transistor) | *N-channel enhancement-mode MOSFET (metal-oxide semiconductor field effect transistor) | ||
*The threshold voltage, <math>V_{to}</math>, is the minimum <math>V_{GS}</math> needed to move the transistor from the Cutoff to Triode region. When is reached, a channel forms beneath the gate, allowing current to flow. | *The threshold voltage, <math>V_{to}</math>, is the minimum <math>V_{GS}</math> needed to move the transistor from the Cutoff to Triode region. When is reached, a channel forms beneath the gate, allowing current to flow. | ||
:*<math>V_{to}</math> is usually on the order of a couple of volts | |||
{| class="wikitable" border="1" | {| class="wikitable" border="1" | ||
|+ Nmos regions | |+ '''Nmos regions''' | ||
! Region!! <math>V_{GS}\,</math> !! <math>i_D\,</math> | ! Region!! <math>V_{GS}\,</math> !! <math>i_D\,</math> | ||
|- | |- | ||
Revision as of 22:21, 14 March 2010
NMOS Transistor
- N-channel enhancement-mode MOSFET (metal-oxide semiconductor field effect transistor)
- The threshold voltage, , is the minimum needed to move the transistor from the Cutoff to Triode region. When is reached, a channel forms beneath the gate, allowing current to flow.
- is usually on the order of a couple of volts
| Region | ||
|---|---|---|
| Cutoff | 0 | |
| Triode | ||
| Saturation |