Chapter 5: Difference between revisions

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| Cutoff|| <math>V_{GS}<V_{to}\,</math> || 0
| Cutoff|| <math>V_{GS}<V_{to}\,</math> || 0
|-
|-
| Triode||  
| Triode|| <math>V_{GS}>V_{to}\,</math> || <math>i_D \propto V_{GS}</math>
|-
|-
| Saturation ||  
| Saturation ||  
|}
|}

Revision as of 22:24, 14 March 2010

NMOS Transistor

  • N-channel enhancement-mode MOSFET (metal-oxide semiconductor field effect transistor)
  • The threshold voltage, Vto, is the minimum VGS needed to move the transistor from the Cutoff to Triode region. When is reached, a channel forms beneath the gate, allowing current to flow.
  • Vto is usually on the order of a couple of volts


Nmos regions
Region VGS iD
Cutoff VGS<Vto 0
Triode VGS>Vto iDVGS
Saturation