Chapter 5: Difference between revisions

Revision as of 22:28, 14 March 2010

N-channel enhancement-mode MOSFET (metal-oxide semiconductor field effect transistor)

The threshold voltage, $V_{t o}$ , is the minimum $V_{G S}$ needed to move the transistor from the Cutoff to Triode region. When is reached, a channel forms beneath the gate, allowing current to flow.

For small values of $V_{D S}$ , $i_{D}$ is proportional to $V_{D S}$ . The device behaves as a resistor whose value depends on $v_{G S}$

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 ===NMOS Transistor===
 *N-channel enhancement-mode MOSFET (metal-oxide semiconductor field effect transistor)
-*The threshold voltage, <math>V_{to}</math>, is the minimum <math>V_{GS}</math> needed to move the transistor from the Cutoff to Triode region. When is reached, a channel forms beneath the gate, allowing current to flow.
-:*<math>V_{to}</math> is usually on the order of a couple of volts
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 | Saturation ||
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+*The threshold voltage, <math>V_{to}</math>, is the minimum <math>V_{GS}</math> needed to move the transistor from the Cutoff to Triode region. When is reached, a channel forms beneath the gate, allowing current to flow.
+:*<math>V_{to}</math> is usually on the order of a couple of volts
+*For small values of <math>V_{DS}</math>, <math>i_D</math> is proportional to <math>V_{DS}</math>. The device behaves as a resistor whose value depends on <math>v_{GS}</math>