Chapter 5: Difference between revisions
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| Triode|| <math>v_{DS} \le v_{GS}- V_{to}\,</math> || <math>i_D \propto v_{DS}</math> |
| Triode|| <math>v_{DS} \le v_{GS}- V_{to}\,</math> || <math>i_D \propto v_{DS}</math> |
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| Saturation || |
| Saturation || <math>v_{DS} \ge v_{GS}- V_{to}\,</math> || |
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Revision as of 22:42, 14 March 2010
NMOS Transistor
- N-channel enhancement-mode MOSFET (metal-oxide semiconductor field effect transistor)
Region | ||
---|---|---|
Cutoff | 0 | |
Triode | ||
Saturation |
- The threshold voltage, , is the minimum needed to move the transistor from the Cutoff to Triode region. When is reached, a channel forms beneath the gate, allowing current to flow.
- is usually on the order of a couple of volts
- For small values of , is proportional to . The device behaves as a resistor whose value depends on